[E-3-2] Concentration Depth Profiling of Heavily Doped Boron at and near SiO₂/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy

K. Kakushima¹、J. Kanehara¹、Y. Izumi²、T. Muro²、T. Kinoshita²、P. Ahmet¹、K. Tsutsui¹、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech、2.JASRI/SPring-8 , Japan)

https://doi.org/10.7567/SSDM.2011.E-3-2