Concentration Depth Profiling of Heavily Doped Boron at and near SiO<sub>2</sub>/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy

K. Kakushima; J. Kanehara; Y. Izumi; T. Muro; T. Kinoshita; P. Ahmet; K. Tsutsui; T. Hattori; H. Iwai

doi:https://doi.org/10.7567/SSDM.2011.E-3-2

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-3-2] Concentration Depth Profiling of Heavily Doped Boron at and near SiO₂/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy

K. Kakushima¹, J. Kanehara¹, Y. Izumi², T. Muro², T. Kinoshita², P. Ahmet¹, K. Tsutsui¹, T. Hattori¹, H. Iwai¹ (1.Tokyo Tech, 2.JASRI/SPring-8 , Japan)

https://doi.org/10.7567/SSDM.2011.E-3-2

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2011 International Conference on Solid State Devices and Materials

[E-3-2] Concentration Depth Profiling of Heavily Doped Boron at and near SiO2/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy

[E-3-2] Concentration Depth Profiling of Heavily Doped Boron at and near SiO₂/Si Interface by Angle-resolved Soft X-ray Photoelectron Spectroscopy