[E-4-2] Reduction of NiGe/nGe Schottky Barrier Height by S and P Co-introduction for Metal Source/Drain in Ge nMOSFETs

M. Koike¹、Y. Kamimuta¹、T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

https://doi.org/10.7567/SSDM.2011.E-4-2