[E-4-3] Improvement of Phosphorus Activation in In-Situ Phosphorus Doped Silicon Epitaxial Film by Cryogenic Silicon Ion-Implantation and Recrystallization Annealing

H. Itokawa¹, S. Teehan², J. Li², P. W. DeHaven³, N. Berliner², J. J. Demarest², N. R. Klymko³, P. Ronsheim³, V. Paruchuri² (1.Toshiba America Electronic Components, Inc., 2.IBM Research at Albany Nanotech Center, 3.IBM Semiconductor Research and Development Center , USA)

https://doi.org/10.7567/SSDM.2011.E-4-3