Improvement of Thermal stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge MOSFETs

H. S. Shin; S. K. Oh; M. H. Kang; H. M. Kwon; J. Oh; P. Majhi; R. Jammy; G. W. Lee; H. D. Lee

doi:https://doi.org/10.7567/SSDM.2011.E-5-2

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-5-2] Improvement of Thermal stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge MOSFETs

H. S. Shin¹, S. K. Oh¹, M. H. Kang^1,2, H. M. Kwon¹, J. Oh³, P. Majhi³, R. Jammy³, G. W. Lee¹, H. D. Lee¹ (1.Chungnam National Univ., 2.National NanoFab Center , Korea, 3.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2011.E-5-2

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