Dual Gated Germanium Junctionless p-MOSFETs

D. D. Zhao; C. H. Lee; T. Nishimura; K. Nagashio; A. Toriumi

doi:https://doi.org/10.7567/SSDM.2011.E-6-2

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[E-6-2] Dual Gated Germanium Junctionless p-MOSFETs

D. D. Zhao^1,2,3, C. H. Lee^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.CREST-JST , Japan, 3.Beijing Normal Univ. , China)

https://doi.org/10.7567/SSDM.2011.E-6-2

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