Control of Surface Roughness on Ge by Wet Chemical Treatments and Its Effects on Electron Mobility in n-FETs

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

C. H. Lee^1,2, T. Nishimura^1,2, T. Tabata^1,2, M. Yoshida¹, K. Nagashio^1,2, K. Kita^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.CREST-JST , Japan)