[E-7-3] Channel strain measurements in 32nm-node CMOSFETs M. Takei1、H. Hashiguchi1、T. Yamaguchi1、D. Kosemura1、K. Nagata1,2、A. Ogura1 (1.Meiji Univ.、2.JSPS , Japan) https://doi.org/10.7567/SSDM.2011.E-7-3