Effect of sulfur treatment on HfO<sub>2</sub>/InGaAs MOS interfaces properties

R. Suzuki; S. Lee; S. H. Kim; T. Hoshii; M. Yokoyama; N. Taoka; T. Yasuda; W. Jevasuwan; T. Maeda; O. Ichikawa; N. Fukuhara; M. Hata; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2011.E-8-3

[E-8-3] Effect of sulfur treatment on HfO₂/InGaAs MOS interfaces properties

R. Suzuki¹, S. Lee¹, S. H. Kim¹, T. Hoshii¹, M. Yokoyama¹, N. Taoka¹, T. Yasuda², W. Jevasuwan², T. Maeda², O. Ichikawa³, N. Fukuhara³, M. Hata³, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.AIST, 3.Sumitomo Chemical Co., Ltd. , Japan)

https://doi.org/10.7567/SSDM.2011.E-8-3

2011 International Conference on Solid State Devices and Materials

[E-8-3] Effect of sulfur treatment on HfO2/InGaAs MOS interfaces properties

[E-8-3] Effect of sulfur treatment on HfO₂/InGaAs MOS interfaces properties