Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al<sub>2</sub>O<sub>3</sub>/InGaAs MOS Properties

T. Hoshii; S. Lee; R. Suzuki; N. Taoka; M. Yokoyama; H. Yamada; W. Jevasuwan; M. Hata; T. Yasuda; M. Takenaka; S. Takagi

doi:https://doi.org/10.7567/SSDM.2011.E-8-4

[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al₂O₃/InGaAs MOS Properties

T. Hoshii¹, S. Lee², R. Suzuki¹, N. Taoka¹, M. Yokoyama¹, H. Yamada², W. Jevasuwan³, M. Hata², T. Yasuda³, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Sumitomo Chemical Co., Ltd., 3.AIST , Japan)

https://doi.org/10.7567/SSDM.2011.E-8-4

2011 International Conference on Solid State Devices and Materials

[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al2O3/InGaAs MOS Properties

[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al₂O₃/InGaAs MOS Properties