Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Solution-processed ITO and Stacked (BLT/PZT) Gate Insulator

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

B. N. Q. Trinh¹、T. Miyasako¹、T. Kaneda¹、P. V. Thanh²、P. T. Tue²、E. Tokumitsu^1,3、T. Shimoda^1,2 (1.JST、2.JAIST、3.Tokyo Tech , Japan)