Data Disturbance-free NAND-type Ferroelectric-gate Thin Film Transistor Array using Solution-processed ITO and Stacked (BLT/PZT) Gate Insulator

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

B. N. Q. Trinh¹, T. Miyasako¹, T. Kaneda¹, P. V. Thanh², P. T. Tue², E. Tokumitsu^1,3, T. Shimoda^1,2 (1.JST, 2.JAIST, 3.Tokyo Tech , Japan)