Process Development of ALD-Rutile-TiO<sub>2</sub>/Ru(O<sub>x</sub>) for DRAM MIMcap Application and its Leakage Mechanism Analysis

K. Tomida; M. Popovici; J. Swerts; W. C. Wang; B. Kaczer; M. A. Pawlak; S. Van Elshocht; M. S. Kim; I. Debusschere; V. V. Afanasiev; L. Altimime; J. A. Kittl

doi:https://doi.org/10.7567/SSDM.2011.F-2-3

[F-2-3] Process Development of ALD-Rutile-TiO₂/Ru(O_x) for DRAM MIMcap Application and its Leakage Mechanism Analysis

K. Tomida¹、M. Popovici¹、J. Swerts¹、W. C. Wang²、B. Kaczer¹、M. A. Pawlak¹、S. Van Elshocht¹、M. S. Kim¹、I. Debusschere¹、V. V. Afanasiev²、L. Altimime¹、J. A. Kittl¹ (1.imec、2.Catholic Univ. of Leuven , Belgium)

https://doi.org/10.7567/SSDM.2011.F-2-3

2011 International Conference on Solid State Devices and Materials

[F-2-3] Process Development of ALD-Rutile-TiO2/Ru(Ox) for DRAM MIMcap Application and its Leakage Mechanism Analysis

[F-2-3] Process Development of ALD-Rutile-TiO₂/Ru(O_x) for DRAM MIMcap Application and its Leakage Mechanism Analysis