Process Development of ALD-Rutile-TiO<sub>2</sub>/Ru(O<sub>x</sub>) for DRAM MIMcap Application and its Leakage Mechanism Analysis

K. Tomida; M. Popovici; J. Swerts; W. C. Wang; B. Kaczer; M. A. Pawlak; S. Van Elshocht; M. S. Kim; I. Debusschere; V. V. Afanasiev; L. Altimime; J. A. Kittl

doi:https://doi.org/10.7567/SSDM.2011.F-2-3

[F-2-3] Process Development of ALD-Rutile-TiO₂/Ru(O_x) for DRAM MIMcap Application and its Leakage Mechanism Analysis

K. Tomida¹, M. Popovici¹, J. Swerts¹, W. C. Wang², B. Kaczer¹, M. A. Pawlak¹, S. Van Elshocht¹, M. S. Kim¹, I. Debusschere¹, V. V. Afanasiev², L. Altimime¹, J. A. Kittl¹ (1.imec, 2.Catholic Univ. of Leuven , Belgium)

https://doi.org/10.7567/SSDM.2011.F-2-3

2011 International Conference on Solid State Devices and Materials

[F-2-3] Process Development of ALD-Rutile-TiO2/Ru(Ox) for DRAM MIMcap Application and its Leakage Mechanism Analysis

[F-2-3] Process Development of ALD-Rutile-TiO₂/Ru(O_x) for DRAM MIMcap Application and its Leakage Mechanism Analysis