[F-3-1] First 64kb Ferroelectric-NAND Flash Memory Array with 7.5 V Program, 10⁸ Endurance and Long Data Retention

X. Zhang¹, M. Takahashi¹, K. Takeuchi², S. Sakai¹ (1.Natl Inst. Adv. Ind. Sci. and Tech., 2.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2011.F-3-1