[F-3-1] First 64kb Ferroelectric-NAND Flash Memory Array with 7.5 V Program, 108 Endurance and Long Data Retention
X. Zhang1、M. Takahashi1、K. Takeuchi2、S. Sakai1
(1.Natl Inst. Adv. Ind. Sci. and Tech.、2.Univ. of Tokyo , Japan)
https://doi.org/10.7567/SSDM.2011.F-3-1