Direct Comparison of Electrical Charaeteristics for Double-Gate and Tri-Gate Flash Memories

Y. X. Liu; T. Kamei; T. Matsukawa; K. Endo; S. O'uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; T. Hayashida; K. Sakamoto; A. Ogura; M. Masahara

doi:https://doi.org/10.7567/SSDM.2011.F-4-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-4-3] Direct Comparison of Electrical Charaeteristics for Double-Gate and Tri-Gate Flash Memories

Y. X. Liu¹、T. Kamei²、T. Matsukawa¹、K. Endo¹、S. O'uchi¹、J. Tsukada¹、H. Yamauchi¹、Y. Ishikawa¹、T. Hayashida²、K. Sakamoto¹、A. Ogura²、M. Masahara^1,2 (1.AIST、2.Meiji Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.F-4-3

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