Direct Comparison of Electrical Charaeteristics for Double-Gate and Tri-Gate Flash Memories

Y. X. Liu; T. Kamei; T. Matsukawa; K. Endo; S. O'uchi; J. Tsukada; H. Yamauchi; Y. Ishikawa; T. Hayashida; K. Sakamoto; A. Ogura; M. Masahara

doi:https://doi.org/10.7567/SSDM.2011.F-4-3

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-4-3] Direct Comparison of Electrical Charaeteristics for Double-Gate and Tri-Gate Flash Memories

Y. X. Liu¹, T. Kamei², T. Matsukawa¹, K. Endo¹, S. O'uchi¹, J. Tsukada¹, H. Yamauchi¹, Y. Ishikawa¹, T. Hayashida², K. Sakamoto¹, A. Ogura², M. Masahara^1,2 (1.AIST, 2.Meiji Univ. , Japan)

https://doi.org/10.7567/SSDM.2011.F-4-3

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