[F-5-2] Re-examination of Performance and Reliability Degradation in MONOS Memory with Ultra-thin (~2nm) SiN Charge Trap Layers

H. Kusai¹, M. Morota¹, M. Oda¹, S. Fujii¹, K. Sakuma¹, M. Koyama¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.F-5-2