Re-examination of Performance and Reliability Degradation in MONOS Memory with Ultra-thin (~2nm) SiN Charge Trap Layers

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

H. Kusai¹、M. Morota¹、M. Oda¹、S. Fujii¹、K. Sakuma¹、M. Koyama¹ (1.Toshiba Corp. , Japan)