The Japan Society of Applied Physics

[F-6-2] Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

C. Ahn1, B. Lee1, R. G. D. Jeyasingh1, M. Asheghi1, G. A. M. Hurkx2, K. E. Goodson1, H. S. P. Wong1 (1.Stanford Univ. , USA, 2.NXP-TSMC Research Center , Belgium)

https://doi.org/10.7567/SSDM.2011.F-6-2