Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

C. Ahn; B. Lee; R. G. D. Jeyasingh; M. Asheghi; G. A. M. Hurkx; K. E. Goodson; H. S. P. Wong

doi:https://doi.org/10.7567/SSDM.2011.F-6-2

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-6-2] Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

C. Ahn¹、B. Lee¹、R. G. D. Jeyasingh¹、M. Asheghi¹、G. A. M. Hurkx²、K. E. Goodson¹、H. S. P. Wong¹ (1.Stanford Univ. , USA、2.NXP-TSMC Research Center , Belgium)

https://doi.org/10.7567/SSDM.2011.F-6-2

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