Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

C. Ahn; B. Lee; R. G. D. Jeyasingh; M. Asheghi; G. A. M. Hurkx; K. E. Goodson; H. S. P. Wong

doi:https://doi.org/10.7567/SSDM.2011.F-6-2

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-6-2] Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory

C. Ahn¹, B. Lee¹, R. G. D. Jeyasingh¹, M. Asheghi¹, G. A. M. Hurkx², K. E. Goodson¹, H. S. P. Wong¹ (1.Stanford Univ. , USA, 2.NXP-TSMC Research Center , Belgium)

https://doi.org/10.7567/SSDM.2011.F-6-2

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