[F-6-3] Effect of Interfacial oxide layer on Switching Uniformity of Ge₂Sb₂Te₅ Based Resistive Switching Memory Device

J. Woo¹、S. Jung¹、S. M. Sadaf¹、E. Cha¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)

https://doi.org/10.7567/SSDM.2011.F-6-3