[F-6-4] Improvement in resistive switching parameters by selecting the SET polarity in IrOx/TaOx/WOx/W structure
A. Prakash1, S. Maikap1, C. S. Lai1, H. Y. Lee2, W. S. Chen2, F. T. Chen2, M. J. Kao2, M. J. Tsai2
(1.Chang Gung Univ., 2.ITRI , Taiwan)
https://doi.org/10.7567/SSDM.2011.F-6-4
