[F-6-4] Improvement in resistive switching parameters by selecting the SET polarity in IrOx/TaOx/WOx/W structure
A. Prakash1、S. Maikap1、C. S. Lai1、H. Y. Lee2、W. S. Chen2、F. T. Chen2、M. J. Kao2、M. J. Tsai2
(1.Chang Gung Univ.、2.ITRI , Taiwan)
https://doi.org/10.7567/SSDM.2011.F-6-4