Reset Current Reduction with Excellent Filament Controllability by using Area Minimized and Field Enhanced Unipolar RRAM structure

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

K. C. Ryoo^1,2、S. H. Park¹、J. H. Oh^1,2、S. Jung¹、H. Jeong²、B. G. Park¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd. , Korea)