[F-7-2] Investigation of Forming and Its Controllability in Novel HfO₂-Based 1T1R 40nm-Crossbar RRAM Cells

B. Govoreanu¹、S. Kubicek¹、G. Kar¹、Y. Y. Chen^1,2、V. Paraschiv¹、M. Rakowski^1,2、R. Degraeve¹、L. Goux¹、S. Clima¹、N. Jossart¹、C. Adelmann¹、O. Richard¹、T. Raes¹、D. Vangoidsenhoven¹、T. Vandeweye¹、H. Tielens¹、K. Kellens¹、K. Devriendt¹、N. Heylen¹、S. Brus¹、B. Verbrugge¹、L. Pantisano¹、H. Bender¹、G. Pourtois¹、J. A. Kittl¹、D. J. Wouters^1,2、L. Altimime¹、M. Jurczak¹ (1.imec、2.Katholieke Univ. Leuven , Belgium)

https://doi.org/10.7567/SSDM.2011.F-7-2