CMOS Compatible Hf-based RRAM with Ultra-low Switching Currents/Power

F. Zhang; X. Li; B. Gao; B. Chen; P. Huang; Y. Fu; Y. Chen; L. Liu; J. Kang; N. Singh; G. Q. Lo; D. L. Kwong

doi:https://doi.org/10.7567/SSDM.2011.F-7-3

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-7-3] CMOS Compatible Hf-based RRAM with Ultra-low Switching Currents/Power

F. Zhang¹、X. Li²、B. Gao¹、B. Chen¹、P. Huang¹、Y. Fu¹、Y. Chen¹、L. Liu¹、J. Kang¹、N. Singh²、G. Q. Lo²、D. L. Kwong² (1.Peking Univ. , China、2.A*STAR , Singapore)

https://doi.org/10.7567/SSDM.2011.F-7-3

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