CMOS Compatible Hf-based RRAM with Ultra-low Switching Currents/Power

F. Zhang; X. Li; B. Gao; B. Chen; P. Huang; Y. Fu; Y. Chen; L. Liu; J. Kang; N. Singh; G. Q. Lo; D. L. Kwong

doi:https://doi.org/10.7567/SSDM.2011.F-7-3

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-7-3] CMOS Compatible Hf-based RRAM with Ultra-low Switching Currents/Power

F. Zhang¹, X. Li², B. Gao¹, B. Chen¹, P. Huang¹, Y. Fu¹, Y. Chen¹, L. Liu¹, J. Kang¹, N. Singh², G. Q. Lo², D. L. Kwong² (1.Peking Univ. , China, 2.A*STAR , Singapore)

https://doi.org/10.7567/SSDM.2011.F-7-3

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