50nm HfO<sub>2</sub> ReRAM with 50-Times Endurance Enhancement by Set/Reset <i>Turnback</i> Pulse &amp; Verify Scheme

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

K. Higuchi¹, K. Miyaji¹, K. Johguchi¹, K. Takeuchi¹ (1.Univ. of Tokyo , Japan)