[F-8-1] 50nm HfO₂ ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse & Verify Scheme

K. Higuchi¹、K. Miyaji¹、K. Johguchi¹、K. Takeuchi¹ (1.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2011.F-8-1