Formation free low power resistive switching memory using IrO<sub>x</sub>/AlO<sub>x</sub>/W cross-point with excellent uniformity and multi level operation

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

W. Banerjee¹, S. Z. Rahaman¹, S. Maikap¹ (1.Chang Gung Univ. , Taiwan)