Highly Uniform and Reliable Switching Properties in NbO<sub>x</sub> Based RRAM Devices

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

S. M. Sadaf¹, X. Liu¹, S. H. Choudhury¹, J. Shin¹, J. Woo¹, M. Siddik¹, H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech. , Korea)