Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeO<sub>x</sub>/W memory device

S. Z. Rahaman; S. Maikap; S. K. Ray; H. Y. Lee; W. S. Chen; F. T. Chen; M. J. Kao; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2011.F-9-1

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[F-9-1] Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeO_x/W memory device

S. Z. Rahaman¹、S. Maikap¹、S. K. Ray^1,2、H. Y. Lee³、W. S. Chen³、F. T. Chen³、M. J. Kao³、M. J. Tsai³ (1.Chang Gung Univ. , Taiwan、2.Indian Inst. of Tech. , India、3.ITRI , Taiwan)

https://doi.org/10.7567/SSDM.2011.F-9-1

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2011 International Conference on Solid State Devices and Materials

[F-9-1] Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeOx/W memory device

[F-9-1] Record resistance ratio and bipolar/unipolar resistive switching scenario using novel Cu/GeO_x/W memory device