Improving switching characteristics of Cu/Si<sub>x</sub>N<sub>y</sub>/Pt device with low voltage stress to perform forming

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

Q. Liu¹, H. B. Lv¹, S. B. Long¹, W. Wang¹, Y. T. Li¹, Y. Wang¹, M. Wang¹, K. W. Zhang¹, H. W. Xie¹, M. Liu¹ (1.Chinese Academy of Sci. , China)