[I-1-6] Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistors with Strained InAs/InGaAs Multiquantum Well Absorption Layers

H. Egusa¹, H. Fukano¹, S. Taue¹, T. Sato², M. Mitsuhara² (1.Okayama Univ., 2.NTT Photonics Labs. , Japan)

https://doi.org/10.7567/SSDM.2011.I-1-6