[I-4-3L] A High-Sensitivity Gate/Body-Tied PMOSFET-Type Photodetector with an Overlapping Control Gate

J. Jung¹、S. H. Seo²、S. H. Jo¹、M. Bae¹、J. K. Shin¹ (1.Kyungpook National Univ.、2.Samsung Mobile Display , Korea)

https://doi.org/10.7567/SSDM.2011.I-4-3L