[I-4-4L] High-Brightness Non-Polar A-plane GaN Light Emitting Diodes Grown on R-plane Sapphire Substrates

S. Jung¹、Y. Chang¹、K. H. Bang¹、H. G. Kim¹、Y. H. Choi¹、S. M. Hwang² (1.LGE Advanced Research Inst.、2.Korea Electronics Technology Inst. , Korea)

https://doi.org/10.7567/SSDM.2011.I-4-4L