[I-4-4L] High-Brightness Non-Polar A-plane GaN Light Emitting Diodes Grown on R-plane Sapphire Substrates

S. Jung¹, Y. Chang¹, K. H. Bang¹, H. G. Kim¹, Y. H. Choi¹, S. M. Hwang² (1.LGE Advanced Research Inst., 2.Korea Electronics Technology Inst. , Korea)

https://doi.org/10.7567/SSDM.2011.I-4-4L