[I-5-1] A GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers for ultrafast all-optical switches

H. Ueyama¹, T. Takahashi¹, Y. Nakagawa^1,2, K. Morita¹, T. Kitada¹, T. Isu¹ (1.Univ. of Tokushima, 2.NICHIA Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.I-5-1