[I-5-1] A GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriers for ultrafast all-optical switches

H. Ueyama¹、T. Takahashi¹、Y. Nakagawa^1,2、K. Morita¹、T. Kitada¹、T. Isu¹ (1.Univ. of Tokushima、2.NICHIA Corp. , Japan)

https://doi.org/10.7567/SSDM.2011.I-5-1