Photoluminescence from n<sup>+</sup> -Ge microdisk on Si-on-Insulator Structure

K. Takinai; A. Yoshida; Y. Ishikawa; K. Wada; T. Tsuchizawa; T. Watanabe; K. Yamada; S. Itabashi

doi:https://doi.org/10.7567/SSDM.2011.I-8-6

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[I-8-6] Photoluminescence from n⁺ -Ge microdisk on Si-on-Insulator Structure

K. Takinai¹、A. Yoshida¹、Y. Ishikawa¹、K. Wada¹、T. Tsuchizawa²、T. Watanabe²、K. Yamada²、S. Itabashi² (1.Univ. of Tokyo、2.NTT Microsystem Integration Labs. , Japan)

https://doi.org/10.7567/SSDM.2011.I-8-6

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2011 International Conference on Solid State Devices and Materials

[I-8-6] Photoluminescence from n+ -Ge microdisk on Si-on-Insulator Structure

[I-8-6] Photoluminescence from n⁺ -Ge microdisk on Si-on-Insulator Structure