Room-Temperature Charge Stability Modulated by Quantum Effect in a Sub-5nm Coulomb Blockade Device

S. J. Shin; J. J. Lee; H. J. Kang; J. B. Choi; S. R. E. Yang; Y. Takahashi; D. G. Hasko

doi:https://doi.org/10.7567/SSDM.2011.J-4-2

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

[J-4-2] Room-Temperature Charge Stability Modulated by Quantum Effect in a Sub-5nm Coulomb Blockade Device

S. J. Shin¹, J. J. Lee¹, H. J. Kang¹, J. B. Choi¹, S. R. E. Yang², Y. Takahashi³, D. G. Hasko⁴ (1.Chunbuk National Univ., 2.Korea Univ. , Korea, 3.Hokkaido Univ. , Japan, 4.Univ. of Cambridge , UK)

https://doi.org/10.7567/SSDM.2011.J-4-2

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