[J-4-3] Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage Characteristics for Ultra-Thin-Body Germanium-On-Insulator MOSFETs

C. H. Yu¹、Y. S. Wu¹、V. P. H. Hu¹、P. Su¹ (1.National Chiao Tung Univ. , Taiwan)

https://doi.org/10.7567/SSDM.2011.J-4-3