Rashba spin-orbit interaction due to wavefunction penetration in In<sub>0.05</sub>Ga<sub>0.95</sub>As/GaAs quantum dots

S. M. Huang; A. O. Badrutdinov; L. Serra; T. Kodera; T. Nakaoka; N. Kumagai; Y. Arakawa; D. A. Tayurskii; K. Kono; K. Ono

doi:https://doi.org/10.7567/SSDM.2011.J-7-1

[J-7-1] Rashba spin-orbit interaction due to wavefunction penetration in In_0.05Ga_0.95As/GaAs quantum dots

S. M. Huang¹, A. O. Badrutdinov^1,2, L. Serra^3,4, T. Kodera^5,6, T. Nakaoka^5,6,7, N. Kumagai^5,6, Y. Arakawa^5,6, D. A. Tayurskii², K. Kono¹, K. Ono^1,7 (1.RIKEN , Japan, 2.Kazan Federal Univ. , Russia, 3.IFISC, 4.Univ. de les Illes Balears , Spain, 5.Univ. of Tokyo, 6.Sophia Univ., 7.ICORP-JST , Japan)

https://doi.org/10.7567/SSDM.2011.J-7-1

2011 International Conference on Solid State Devices and Materials

[J-7-1] Rashba spin-orbit interaction due to wavefunction penetration in In0.05Ga0.95As/GaAs quantum dots

[J-7-1] Rashba spin-orbit interaction due to wavefunction penetration in In_0.05Ga_0.95As/GaAs quantum dots