[J-7-4] Effect of Free Carriers on Dopant-induced Surface Potential in SOI-FETs M. Anwar1, R. Nowak1,2, D. Moraru1, R. Jablonski2, T. Mizuno1, M. Tabe1 (1.Shizuoka Univ. , Japan, 2.Warsaw Univ. of Tech. , Pol) https://doi.org/10.7567/SSDM.2011.J-7-4