2011 International Conference on Solid State Devices and Materials
Sep 27, 2011 - Sep 30, 2011 Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan
[K-2-4] Optimization of Source/Drain Doping Concentration of Carbon Nanotube FETs to Suppress Off-state Leakage Current while Keeping Ideal On-state Current
