Optimization of Source/Drain Doping Concentration of Carbon Nanotube FETs to Suppress Off-state Leakage Current while Keeping Ideal On-state Current

2011 International Conference on Solid State Devices and Materials

2011年9月27日〜 2011年9月30日
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

B. P. Algul¹、K. Uchida¹ (1.Tokyo Tech , Japan)