Theory on Initial Stage of Epitaxial Graphene Growth on SiC(0001)

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

H. Kageshima¹, H. Hibino¹, H. Yamaguchi¹, M. Nagase² (1.NTT Basic Res. Labs., 2.Univ. of Tokushima , Japan)